Prof. Bae`s R.P.

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  • 1 J.-H. Bae, D. Kwon*, S. Cheema, A. J. Tan, C. Hu, and S. Salahuddin*, (*co-corresponding authors) "Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors" IEEE Electron Device Letters, vol. 41, no. 11, pp. 1637-1640, doi: 10.1109/LED.2020.3028339, 2020-11