Prof. Bae`s R.P.

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  • 21 K.-B. Choi, S.-Y. Woo, W.-M. Kang, S. Lee, C.-H. Kim, J.-H. Bae, and J.-H. Lee "A Split-Gate Positive Feedback Device with an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit" Frontiers in Neuroscience, vol. 12, no. 704, pp. 1-13, doi: 10.3389/fnins.2018.00704, 2018-10
  • 20 S. Hong, J. Shin, Y. Hong, M. Wu, D. Jang, Y. Jeong, G. Jung, J.-H. Bae, H. W. Jang and J.-H. Lee "Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature" Nanoscale, vol. 10, no. 37, pp. 18019-18027, doi: 10.1039/C8NR04472D, 2018-09
  • 19 S. Hong, Y. Hong, Y. Jeong, G. Jung, W. Shin, J. Park, J.-K. Lee, D. Jang, J.-H. Bae, and J.-H. Lee "Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect" Sensors and Actuators B: Chemical, vol. 300, p. 127040, doi: 10.1016/j.snb.2019.127040, 2019-12
  • 18 M.-K. Park, H.-N. Yoo, Y.-T. Seo, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Field Effect Transistor-Type Devices Using High-κ Gate Insulator Stacks for Neuromorphic Applications" ACS Applied Electronic Materials, vol. 2, no. 2, pp. 323-328, doi: 10.1021/acsaelm.9b00698, 2019-12
  • 17 C.-H. Kim, S. Lee, S. Y. Woo, W.-M. Kang, S. Lim, J.-H. Bae, J. Kim and J.-H. Lee "Demonstration of Unsupervised Learning with Spike-Timing-Dependent Plasticity using a TFT type NOR Flash Memory Array" IEEE Transactions on Electron Devices, vol. 65, no. 5, pp. 1774-1780, doi: 10.1109/TED.2018.2817266, 2018-05
  • 16 J. Shin, Y. Hong, M. Wu, J.-H. Bae, H.-I. Kwon, B.-G. Park, and J.-H. Lee "An accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS2 as a sensing layer by pulse measurement" Sensors and Actuators B: Chemical, vol. 258, pp. 574-579, doi: 10.1016/j.snb.2017.11.132, 2018-04
  • 15 Y. Hong, M. Wu, J.-H. Bae, S. Hong, Y. Jeong, D. Jang, J. S. Kim, C. S. Hwang, B.-G. Park, and J.-H. Lee "A new sensing mechanism of Si FET-based gas sensor using pre-bias" Sensors and Actuators B: Chemical, vol. 302, p. 127147, doi: 10.1016/j.snb.2019.127147, 2020-01
  • 14 H. Kim, J.-H. Bae, S. Lim, S.-T. Lee, Y.-T. Seo, D. Kwon, B.-G. Park, and J.-H. Lee "Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy" Neurocomputing, vol. 378, pp. 189-196, doi: 10.1016/j.neucom.2019.09.099, 2020-02
  • 13 J.-H. Bae, S. Lim, B.-G Park, and J.-H. Lee "High-density and near-linear synaptic device based on a reconfigurable gated Schottky diode" IEEE Electron Device Letters, vol. 38, no. 8, pp. 1153-1156, doi: 10.1109/LED.2017.2713460, 2017-08
  • 12 H.-J. Kang, N. Choi, J.-H. Bae, B.-G. Park, and J.-H. Lee "Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells" IEEE Electron Device Letters, vol. 38, no. 7, pp. 867-870, doi: 10.1109/LED.2017.2705721, 2017-07
  • 11 J. Kim, C.-H. Kim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. Lee, S. Oh, J.-H. Bae, B.-G. Park, and J.-H. Lee "Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network" Solid-State Electronics, vol. 165, p. 107742, doi: 10.1016/j.sse.2019.107742, 2020-03
  • 10 J.-M. Park†, J.-H. Bae†, J.-H. Eum, S. H. Jin, B.-G. Park, and J.-H. Lee,(†These authors equally contributed to this work) "High-Density Reconfigurable Devices With Programmable Bottom-Gate Array" IEEE Electron Device Letters, vol. 38, no. 5, pp. 564-567, doi: 10.1109/LED.2017.2679343, 2017-03
  • 9 S. Y. Woo, K.-B. Choi, J. Kim, W.-M. Kang, C.-H. Kim, Y.-T. Seo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network" Solid-State Electronics, vol. 165, p. 107741, doi: 10.1016/j.sse.2019.107741, 2020-03
  • 8 Y.-T. Seo, M.-K. Park, J.-H. Bae, B.-G. Park, and J.-H. Lee "Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks" Journal of Naniscience and Nanotechnology, vol. 20, no. 7, pp. 4292-4297, doi: 10.1166/jnn.2020.17788, 2020-07
  • 7 J. H. Bae, and J.-H. Lee "Dual-gate p-GaN gate high electron mobility transistors for steep subthreshold slope" Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4919-4923, doi: 10.1166/jnn.2016.12258, 2016-05
  • 6 S.-M. Joe, J.-H. Bae, C. H. Park, and J.-H. Lee "Modeling of ΔIBL due to random telegraph noise with considering bit-line interference in NAND flash memory" Semiconductor Science and Technology, vol. 29, no. 12, p. 125013, doi: 10.1088/0268-1242/29/12/125013, 2014-11
  • 5 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, H.-S. Kim, B.-G. Park, and J.-H. Lee "Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4138-4142, doi: 10.1166/jnn.2020.17791, 2020-07
  • 4 G. Kim, E. Park, J. H. Kim, J.-H. Bae, D. H. Kang, and B.-G. Park "Analysis of trap and its impact on InGaN-based blue light-emitting diodes using current-transient methodology" Japanese Journal of Applied Physics, vol. 53, no. 6, p. 062101, doi: 0.7567/JJAP.53.062101, 2014-05
  • 3 K. Lee†, J.-H. Bae†, S. Kim, J.-H. Lee, B.-G. Park, and D. Kwon, (†These authors equally contributed to this work) "Ferroelectric-Gate Field-Effect Transistor Memory with Recessed Channel" IEEE Electron Device Letters, vol. 41, no. 8, pp. 1201-1204, doi: 10.1109/LED.2020.3001129, 2020-08
  • 2 J.-K. Lee, J.-W. Lee, J.-H. Bae, J. Park, S.-W Chung, J. S. Roh, S.-J. Hong, and J.-H. Lee "Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx-Based Bipolar Resistive Switching Random Access Memory Devices" Journal of Nanoscience and Nanotechnology, vol. 12, no. 7, pp.5392-5396, doi: 10.1166/jnn.2012.6249, 2012-07