Prof. Bae`s R.P.

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  • 41 H. B. Yoo, H. Kim, J. H. Ryu, J. Park, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Modeling and Characterization of Photovoltaic and Photoconductive Effects in Insulated-Gate Field Effect Transistors under Optical Exciation" Solid-State Electronics, vol. 186, p. 108139, DOI: 10.1016/j.sse.2021.108139, 2021-06
  • 40 H. -N. Yoo, B. Choi, J. -W. Back, H. -J. Kang, E. Kwon, S. Chung, J. -H. Bae, B. -G. Park, and J. -H. Lee "Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3088851., 2021-06
  • 39 H. Kim, H. B. Yoo, J. H. Ryu, J.-H. Bae, S.-J. Choi, D. H. Kim and D. M. Kim "Current-to-Transconductance Ratio Technique for Simultaneous Extraction of Threshold Voltage and Parasitic Resistances in MOSFETs" Solid-State Electronics, Vol. 183, p.108133, DOI: 10.1016/j.sse.2021.108133, 2021-06
  • 38 D. Kang, J. T. Jang, S. Park, M. H. R. A, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, S. Cho*, and D. H. Kim*(*Corresponding author) "Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System" IEEE Access, vol. 9, pp. 59345-59352, doi: 10.1109/ACCESS.2021.3072688, 2021-04, 2021-04
  • 37 J. T. Jang†, H. -D. Kim†, C. Kim, S. -J. Choi, J. -H. Bae, D. M. Kim, H. -S. Kim*, and D. H. Kim*(†These authors equally contributed to this work)(*Corresponding author) "Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N content" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3077908., 2021-05
  • 36 W. Shin, D. Kwon, J. -H. Bae, S. Lim, B. -G. Park and J. -H. Lee "Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3072915., 2021-04
  • 35 J. -H. Kim, J. T. Jang, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, Y. Kim 3,* and D. H. Kim*(* Corresponding author) "Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Micromachines, vol. 12, no. 3, p. 327, 2021-03
  • 34 J.-H. Bae, H. Kim, D. Kwon, S. Lim, S.-T. Lee, B.-G. Park, and J.-H. Lee "Reconfigurable Field-Effect-Transistor as a Synaptic Device for XNOR Binary Neural Network" IEEE Electron Device Letters, vol. 40, no. 4, pp. 624-627, doi: 10.1109/LED.2019.2898448, 2019-04
  • 33 N. Choi, H.-J. Kang, J.-H. Bae, B.-G. Park, and J.-H. Lee "Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells" IEEE Electron Device Letters, vol. 40, no. 5, pp. 702-705, doi: 10.1109/LED.2019.2905299, 2019-03
  • 32 S. Lim, D. Kwon, J.-H. Eum, S.-T. Lee, J.-H. Bae, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Highly Reliable Inference System of Neural Networks Using Gated Schottky Diodes" IEEE Journal of the Electron Device Society, vol. 7, pp. 522-528, doi: 10.1109/JEDS.2019.2913146, 2019-04
  • 31 S. Y. Woo, K.-B. Choi, S. Lim, S.-T. Lee, C.-H. Kim, W.-M. Kang, D. Kwon, J.-H. Bae, B.-G. Park, and J.-H. Lee "Synaptic device using a floating fin-body MOSFET with memory functionality for neural network" Solid-State Electronics, vol. 156, pp. 23-27, doi: 10.1016/j.sse.2019.02.011, 2019-06
  • 30 J.-H. Bae, S. Lim, D. Kwon, J.-H. Eum, S. Lee, H. Kim, B.-G. Park, and J.-H. Lee "Near-Linear Potentiation Mechanism of Gated Schottky Diode as a Synaptic Device" IEEE Journal of the Electron Device Society, vol. 7, pp. 335-343, doi: 10.1109/JEDS.2019.2898674, 2019-02
  • 29 J.-H. Bae, J.-W. Back, M.-W. Kwon, J. H. Seo, K. Yoo, S. Y. Woo, K. Park, B.-G. Park, and J.-H. Lee "Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications" IEEE Electron Device Letters, vol. 40, no. 10, pp. 1614-1617, doi: 10.1109/LED.2019.2933504, 2019-08
  • 28 Y.-T. Seo, M.-S. Lee, C.-H. Kim, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Si-based FET-type synaptic device with short-term and long-term plasticity using high-k gate stack" IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 917-923, doi: 10.1109/TED.2018.2888871, 2019-02
  • 27 S. Hong, J. Shin, Y. Hong, M. Wu, Y. Jeong, D. Jang, G. Jung, J.-H. Bae, and J.-H. Lee "Humidity-Sensitive Field Effect Transistor with In2O3 Nanoparticles as a Sensing Layer" Journal of nanoscience and nanotechnology, vol. 19, no. 10, pp. 6656-6662, doi: 10.1166/jnn.2019.17092, 2019-10
  • 26 D. Kwon, S. Lim, J.-H. Bae, S.-T. Lee, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Adaptive Weight Quantization Method for Nonlinear Synaptic Devices" IEEE Transactions on Electron Devices, vol. 66, no. 1, pp.395-401, doi: 10.1109/TED.2018.2879821, 2019-01
  • 25 J.-H. Bae, S. Lim, D. Kwon, S.-T. Lee, H. Kim, and J.-H. Lee "Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current" Journal of Nanoscience and Nanotechnology, vol.19, no. 10, pp. 6135-6138, doi: 10.1166/jnn.2019.17003, 2019-10
  • 24 C.-H. Kim, S. Lim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. T. Lee, S. Lee, D. Kwon, S. Oh, Y. Noh, H. Kim, J. Kim, J.-H. Bae, and J.-H. Lee "Emerging memory technologies for neuromorphic computing" Nanotechnology, vol. 30, no. 3, p. 032001, doi: 10.1088/1361-6528/aae975, 2018-11
  • 23 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, B.-G. Park, and J.-H. Lee "Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices" IEEE Journal of the Electron Device Society, vol. 7, pp. 1085-1093, doi: 10.1109/JEDS.2019.2947316, 2019-10
  • 22 S. Lim, J.-H. Bae, J.-H. Eum, S. Lee, C.-H. Kim, D. Kwon, B.-G. Park, and J.-H. Lee "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices" Neural Computing & Applications, vol. 31, no. 11, pp. 8101-8116, doi: 10.1007/s00521-018-3659-y, 2019-11