Prof. Kim`s R.P.

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  • 223 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, J. W. Jeon, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Wafer-Scale Carbon Nanotube Network Transistors" Nanotechnology, vol. 31, no. 46, p. 465303, DOI: 10.1088/1361-6528/abac31, 2020-08
  • 222 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), 2020-07
  • 221 D. Kim†, J. T. Jang†, E. Yu, J. Park, J. Min, D. M. Kim, S.-J. Choi, H.-S. Mo, S. Cho*, K. Roy, D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency" ACS Appl. Electron. Mater., vol. 2, no. 8, pp. 2390-2397, 2020-07
  • 220 J. Kim, C. T. T. Huong, N. V. Long, M. Yoon, M. J. Kim, J. K. Jeong, S. Choi, D. H. Kim, C. H. Lee, S. U. Lee, and M. M. Sung "Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization" Nano lett., vol. 20, pp. 4864-4871, 2020-06
  • 219 J. Park†, Y. Lee†, B. Choi, J. Yoon, Y. Kim, H.-J. Kim, M.-H. Kang, D. H. Kim, D. M. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters" Nanotechnology, vol. 31, no. 32, p. 32LT01, DOI:10.1088/1361-6528/ab8c06, 2020-05
  • 218 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory" Appl. Phys. Express, vol. 13, no. 5, p. 054004, doi: 10.35848/1882-0786/ab88c1, 2020-04
  • 217 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-correspoing authors) "Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors" IEEE Electron Device Letters, vol. 41, no. 4, pp. 561-564, Apr. 2020, doi: 10.1109/LED.2020.2974757, 2020-04
  • 216 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors) " A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence" Solid-State Electronics, vol. 166 p. 107764, DOI: 10.1016/j.sse.2020.107764, 2020-04
  • 215 S. Choi, H.-S. Mo, J. Kim, S. Kim, S. M. Lee, S.-J. Choi, D. M. Kim, D.-W. Park,* and D. H. Kim*(*co-corresponding authors) "Experimental Extraction of Stern-Layer Capacitance in Biosensor Detection Using Silicon Nanowire Field-Effect Transistors" Current Applied Physics, vol. 20, no. 6, pp. 828-833, DOI: 10.1016/j.cap.2020.02.021, 2020-03
  • 214 Y. Lee, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H.Kang*, and S.-J. Choi* (*co-corresponding authors) "Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors" AIP Advances, vol. 10, no. 2, p. 025131, DOI: 10.1063/1.5139085, 2020-02
  • 213 Y. Lee†, G.-H. Park†, B. Choi, J. Yoon, H.-J. Kim, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (†These authors equally contributed to this work & *co-corresponding authors) "Design study of the gate-all-around silicon nanosheet MOSFETs" Semiconductor Science and Technology, vol. 35, no. 3, p. 03LT01, DOI: 10.1088/1361-6641/ab6bab, 2020-02
  • 212 J. Lee†, J. T. Jang†, J. Jang, J. Kim, J. W. Chung, S.-J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim "Density-of-States Based Physical Model for Ink-jet Printed Thiophene Polymeric TFTs" IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 283-288, doi: 10.1109/TED.2019.2953193, 2020-01
  • 211 S. Choi†, S. G. Seo†, H. R. Yu, S. Y. Kim, D. H. Kim*, and S. H. Jin*(†These authors equally contributed to this work & *co-corresponding authors) "Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multi-Layered MoS2 Field Effect Transistors" Physica status solidi (a), 1900492, DOI : 10.1002/pssr.201900492, 2019-12
  • 210 S. Choi†, S. Park†, J. Kim, Y. Seo, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D. M. Kim, S. -J. Choi, and D. H. Kim* (†These authors equally contributed to this work) "Positive Bias Stress Instability of InGaZnO TFTs with Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel" IEEE Electron Device Lett., vol. 41, no., 1, pp. 50-53, DOI:10.1109/LED.2019.2954543, 2019-11
  • 209 Y. Seo, H.-S. Jeong, H.-Y. Jeong, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, X. Jin, H.-I. Kwon*, and D. H. Kim* (*co-corresponding authors) "Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors" Materials, vol. 12, no. 19, p. 3248; https://doi.org/10.3390/ma12193248,2019-10, 2019-10
  • 208 M. Uhm, J.-M. Lee, J. Lee, J. H. Lee, S. Choi, B.-G. Park, D. M. Kim, S.-J. Choi, H.-S. Mo, Y.-J. Jeong,* and D. H. Kim* (*co-corresponding authors) "Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors" Sensors, vol. 19, no. 20, p. 4502, DOI : 10.3390/s19204502, 2019-10
  • 207 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics, vol. 8, no. 10, p. 1087, 2019-09, doi: 10.3390/electronics8101087., 2019-09
  • 206 S. Choi, J.-Y. Kim, H. Kang, D. Ko, J. Rhee, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials, vol. 12, no. 19p. 3149, DOI : 10.3390/ma12193149, 2019-10
  • 205 H. B. Yoo, J. Kim, J. Yoo, H.-J. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Capacitance-Voltage Technique for Characterization of Lateral Trap Locations along the Channel in Field Effect Transistors" Solid-State Electronics, vol. 163,p. 107647, DOI: 10.1016/j.see.2019.107647, 2020-01, 2019-09
  • 204 S. Choi†, S. Kim†, J. Jang, J. Kim, D. M. Kim, S.-J. Choi, H.-S. Mo, S. M. Lee*, and D. H. Kim* (†These authors equally contributed to this work,*co-corresponding authors) "Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance" IEEE Electron Device Lett. , vol. 40, no, 10. pp. 1666-1669, DOI: 10.1109/LED.2019.2937157, 2019-10