Prof. Kim`s R.P.

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  • 205 H. B. Yoo, H. Kim, J. H. Ryu, J. Park, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Modeling and Characterization of Photovoltaic and Photoconductive Effects in Insulated-Gate Field Effect Transistors under Optical Exciation" Solid-State Electronics, vol. 186, p. 108139, DOI: 10.1016/j.sse.2021.108139, 2021-06
  • 204 H. Kim, H. B. Yoo, J. H. Ryu, J.-H. Bae, S.-J. Choi, D. H. Kim and D. M. Kim "Current-to-Transconductance Ratio Technique for Simultaneous Extraction of Threshold Voltage and Parasitic Resistances in MOSFETs" Solid-State Electronics, Vol. 183, p.108133, DOI: 10.1016/j.sse.2021.108133, 2021-06
  • 203 D. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, S. Ban, M. Shin, H. Lee, H. D. Lee, H.-S. Mo, D. H. Kim*(*Corresponding author) "A physics-based compact model for phase-change memory considering the ratio of vertical-to-lateral crystal growth rate for the design of cross-point storage-class memory" Solid-State Electronics, Vol. 186, p. 107955, DOI: 10.1016/j.sse.2020.107955, 2021-01
  • 202 D. Kang, J. T. Jang, S. Park, M. H. R. A, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, S. Cho*, and D. H. Kim*(*Corresponding author) "Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System" IEEE Access, vol. 9, pp. 59345-59352, doi: 10.1109/ACCESS.2021.3072688, 2021-04, 2021-04
  • 201 J. T. Jang†, H. -D. Kim†, C. Kim, S. -J. Choi, J. -H. Bae, D. M. Kim, H. -S. Kim*, and D. H. Kim*(†These authors equally contributed to this work)(*Corresponding author) "Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N content" IEEE Electron Device Letters, vol. 42, no. 7, pp. 1006-1009, July 2021, doi: 10.1109/LED.2021.3077908., 2021-05
  • 200 J. T. Jang, D. Ko, S. -J. Choi, D. M. Kim, and *D. H. Kim(* Corresponding author) "Observation of Hydrogen-related Defect in Subgap Density of States and Its Effects under Positive Bias Stress in amorphous InGaZnO TFT" IEEE Electron Device Letters, vol. 42, no. 5, pp. 708-711, May 2021, doi: 10.1109/LED.2021.3066624., 2021-03
  • 199 J. -H. Kim, J. T. Jang, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, Y. Kim 3,* and D. H. Kim*(* Corresponding author) "Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Micromachines, vol. 12, no. 3, p. 327, doi:10.3390/mi12030327, 2021-03
  • 198 J.-T. Yu†, H. B. Yoo†, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim*(†These two authors contributed equally to this work.) "Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect" Journal of Nanoscience and Nanotechnology, Vol. 21, No. 8, pp. 4315-4319, DOI: 10.1166/jnn.2021.19391, 2021-08
  • 197 Y. Lee†, J. Yoon†, Y. Kim†, D. M. Kim, D. H. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Humidity effects according to the type of carbon nanotubes" IEEE Access, Vol. 9, pp.6810-6816, DOI:10.1109/ACCESS.2020.3048173, 2020-12
  • 196 J. T. Jang†, J. Min†, Y. Hwang, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System" IEEE Access, vol. 8, pp. 192304-192311, doi: 10.1109/ACCESS.2020.3032188, 2020-10
  • 195 H. B. Yoo1, J. Yu1, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim* (1 Contributed equally to this work.)(*Corresponding author.) "Deep Depletion Capacitance-Voltage Technique For Spatial Distribution of Traps Across the Substrate in MOS Structures" Solid-State Electronics, vol. 173, p.107905. doi:10.1016/j.sse.2020.107905, 2020-10
  • 194 S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Extraction Technique for Flat Band Voltage Using Multi-Frequency C-V Characteristics in Amorphous InGaZnO Thin-Film-Transistors" IEEE Electron Device Lett., vol. 41, no. 12, pp. 1778-1781, Dec. 2020, doi: 10.1109/LED.2020.3032442., 2020-12
  • 193 H. Kim, H. B. Yoo, J.-T. Yu, J. H. Ryu, S.-J. Choi , D. H. Kim, and D. M. Kim "Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact" IEEE Electron Device Lett., vol. 41, no. 10, pp. 1528-1531, doi: 10.1109/LED.2020.3020405., 2020-10
  • 192 J. T. Jang, D. Kim, W. S. Choi, S.-J. Choi, D. M. Kim, Y. Kim*, and D. H. Kim* (*co-corresponding authors) "One Transistor-Two Memristor Based on Amorphous Indium-Gallium-Zinc-Oxide for Neuromorphic Synaptic Devices" ACS Appl. Electron. Mater., vol. 2, no. 9, pp. 2837-2844, doi : 10.1021/acsaelm.0c00499, 2020-09
  • 191 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-corresponding authors) "Effect of Anion Composition on the Bias Stress Stability in Zn–O–N Thin-Film Transistors" IEEE Electron Device Lett., vol. 41, no. 9, pp. 1376-1379, doi: 10.1109/LED.2020.3012465., 2020-08
  • 190 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, J. W. Jeon, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Wafer-Scale Carbon Nanotube Network Transistors" Nanotechnology, vol. 31, no. 46, p. 465303, DOI: 10.1088/1361-6528/abac31, 2020-08
  • 189 D. Kim†, J. T. Jang†, E. Yu, J. Park, J. Min, D. M. Kim, S.-J. Choi, H.-S. Mo, S. Cho*, K. Roy, D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency" ACS Appl. Electron. Mater., vol. 2, no. 8, pp. 2390-2397, doi : 10.1021/acsaelm.0c00341, 2020-07
  • 188 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), doi :10.1166/jnn.2020.17785, 2020-07
  • 187 J. Park†, Y. Lee†, B. Choi, J. Yoon, Y. Kim, H.-J. Kim, M.-H. Kang, D. H. Kim, D. M. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters" Nanotechnology, vol. 31, no. 32, p. 32LT01, DOI:10.1088/1361-6528/ab8c06, 2020-05
  • 186 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory" Appl. Phys. Express, vol. 13, no. 5, p. 054004, doi: 10.35848/1882-0786/ab88c1, 2020-04