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  • 300 I. Chae, J. T. Jang, S. Park, W. S. Choi, J.-H. Bae, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of the ALD temperature on switching characteristic in Cu-based CBRAM with the solid electrolyte of Al2O3" The 28th Korean Conference on Semiconductors, 2021-01
  • 299 J. W. Jeon1, Y. Lee1, G.-H. Park1, J. Kirn1, D. M. Kim1, D. H. Kim1, M.-H. Kang2, and S.-J. Choi1(1 School of EE, Kookmin University, 2 Department of Nano-process, NNFC) "Wafer-Scale Striped Carbon Nanotube Network Transistor" The 28th Korean Conference on Semiconductors, 2021-01
  • 298 H. Lee†, J. Park†, S.-J. Choi, J.-H. Bae, D. M. Kim, and D. H. Kim(†These authors equally contributed to this work) "The IGZO-based Correlated Color Temperature Sensor for Measuring the Melatonin Suppression and the Circadian Disturbance" The 28th Korean Conference on Semiconductors, 2021-01
  • 297 Y. Lee1, J. W. Jeon1, J. Kim1, D. H. Kim1, D. M. Kim1, M.-H. Kang2, and S.-J. Choi1(1 School of EE, Kookmin University, 2 Department of Nano-process, NNFC) "Rapid thermal annealed carbon nanotube network transistors for physical unclonable function applications" The 28th Korean Conference on Semiconductors, 2021-01
  • 296 T. J. Yang, J. T. Jang, W. S. Choi, D. Kim, J.-H. Bae, S.-J. Choi, D. M. Kim, and D. H. Kim "The Effect of Oxygen Content on the Optical Power- and Wavelength-Dependencies of the IGZO Memristor-based Photodetector" The 28th Korean Conference on Semiconductors, 2021-01
  • 295 G. W. Yang, J. Park, S. Choi, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim "Experimental Observation of the Variation of Oxygen Vacancy-Related Density of States in InGaZnO TFTs under the Negative Bias Illumination Stress" The 28th Korean Conference on Semiconductors, 2021-01
  • 294 J. H. Ryu*, H. B. Yoo*, J. Yu, H. Kim, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim(*These authors equally contributed to this work) "Extraction of Interface Traps over the Bandgap through Photovoltaic and Photoconductive Effects in Si MOSFETs under Optical Excitation" The 28th Korean Conference on Semiconductors, 2021-01
  • 293 J.-H. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim "Influence of the oxygen content on hot carrier effects in the bottom-gate amorphous InGaZnO thin-film transistors" The 28th Korean Conference on Semiconductors, 2021-01
  • 292 D. Kang, J. T. Jang, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim "Short-term and Long-term Memory operations of a-IGZO Synaptic TFTs with the low-temperature ALD Al2O3 gate insulator and Metal Floating Gate" The 28th Korean Conference on Semiconductors, 2021-01
  • 291 W. S. Choi, J. T. Jang, T. J. Yang, S.-J. Choi, J.-H. Bae, D. M. Kim, and D. H. Kim "Improvement of the linearity of synaptic behavior of IGZO memristor by combining the IGZO synaptic transistor" The 28th Korean Conference on Semiconductors, 2021-01
  • 290 D. H. Kim "Toward the material-device-circuit co-design of the oxide semiconductor-based artificial intelligence: from transistor, memory, and sensor to modeling, simulation, and reliability" The 28th Korean Conference on Semiconductors, 2021-01
  • 289 G. Jung1, S. Hong1, Y. Jeong1, W. Shin1, J. Park1, D. Kim1, J.-H. Bae2, B.-G. Park1, and J.-H. Lee1(1 Seoul National University, Korea, 2 Kookmin University, Korea) "H2S Gas Sensing Characteristics of Si FET-type Gas Sensor with Localized Micro-heater" The 28th Korean Conference on Semiconductors, 2021-01
  • 288 J.-H. bae "Reliability Problem and Improvement Strategy of Ferroelectric Memory Device" The 28th Korean Conference on Semiconductors, 2021-01
  • 287 D. Kang, J. T. Jang, S. Park, D. M. Kim, S.-J. Choi and D. H. Kim "Characteristics of a-IGZO Synaptic Transistor having Extended Gate with Al2O3 gate insulator by low temperature ALD" The 27th Korean Conference on Semiconductors, 2020-02
  • 286 D. Kim1, J. T. Jang1, W. S. Choi1, S. Baek1, D. M. Kim1, S.-J. Choi1, S. Ban 2, M. Shin 2, H. Lee 2, H. Lee2, H.-S. Mo1, and D. H. Kim1* (1 School of EE, Kookmin University, 2 SK Hynix) "Physics-based PcRAM Compact Model and Its Application to the SPICE Transient Simulation Considering the Ratio of Vertical/Lateral Crystal Growth Rate" The 27th Korean Conference on Semiconductors, 2020-02
  • 285 J.-H. Kim, S. Choi, Y. J. Seo, J. Park, G. W. Yang, I. Chae, D. M. Kim, S.-J. Choi, and D. H. Kim* "Relationship between the gate bias and stretched-exponential function model on the positive bias stress-induced charge trapping in IGZO TFTs" The 27th Korean Conference on Semiconductors, 2020-02
  • 284 H. B. Yoo, H. Kim, J. Yu, Y. J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim "Alternating Current-based Open Drain Method for Separate Extraction of Source and Drain Resistances in MOSFETs" The 27th Korean Conference on Semiconductors, 2020-02
  • 283 J. T. Jang†, J. Min†, W. S. Choi, D. Kim, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Training and Operation of an Artificial Neural Network in IGZO-based Crossbar Array" The 27th Korean Conference on Semiconductors, 2020-02
  • 282 S. Park, J. T. Jang, D. Kang, D. M. Kim, S.-J. Choi, and D. H. Kim* "Influence of Interfacial SiO2 Layer on PBS-induced Instability in Amorphous InGaZnO TFTs with Low Temperature ALD Gate Insulator" The 27th Korean Conference on Semiconductors, 2020-02
  • 281 J. Park, J. T. Jang, G. Ahn, J. Min, S.-J. Choi, D. M. Kim, and D. H. Kim* "Performance Improvement of InGaZnO-based RRAM with Al2O3 Inserting Tunneling Barrier Layer" The 27th Korean Conference on Semiconductors, 2020-02